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| EFA960CR-CP083 UPDATED 05/19/2006 Low Distortion GaAs Power FET .2900.005 2X .065 .015 .075 .220 .200 .050 .160 .096 .010 MAX FEATURES * * * * * * NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +36.0dBm OUTPUT POWER 15.5 dB TYPICAL POWER GAIN AT 2 GHz 0.5x9600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY .0080.001 All Dimensions in Inches ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BVGS RTH* PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz 2.0 GHz Caution! ESD sensitive device. MIN 34.5 14.0 TYP 36.0 36.0 15.5 10.5 30 1600 1100 2720 1450 -2.0 -13 -7 -15 -14 6* o MAX UNITS dBm dB % VDS = 3 V, VGS = 0 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 27 mA IGD = 9.6 mA IGS = 9.6 mA 3520 mA mS -3.5 V V V C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 10V -5V 43.2 mA -7.2 mA 33 dBm 175oC -65/175oC 23 W CONTINUOUS2 8V -4V 14.4 mA -2.4 mA @ 3dB Compression 175oC -65/175oC 23 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised May 2006 EFA960CR-CP083 UPDATED 05/19/2006 Low Distortion GaAs Power FET S-PARAMETERS 8V, 1/2 Idss FREQ (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 --- S11 --MAG ANG --- S21 --MAG ANG 94.5 76.9 68.2 58.4 49.4 40.4 30.1 18.3 5.2 -8.7 -22.4 -35.9 -46.6 -59.9 -77.1 -96.3 --- S12 --MAG 0.012 0.013 0.020 0.023 0.026 0.031 0.038 0.045 0.052 0.059 0.066 0.073 0.081 0.095 0.110 0.118 ANG 24.2 25.8 29.5 29.4 29.6 28.3 24.5 17.6 9.6 0.6 -9.4 -19.0 -25.3 -34.5 -48.8 -65.3 -80.8 -97.3 --- S22 --MAG 0.810 0.779 0.739 0.736 0.725 0.703 0.679 0.656 0.634 0.624 0.621 0.609 0.571 0.560 0.543 0.532 0.555 0.606 ANG 178.8 175.0 168.6 164.9 161.7 158.0 152.7 145.7 136.8 127.2 117.7 108.0 104.6 92.9 75.7 55.1 33.4 15.9 4.5 0.5 0.983 -155.2 6.432 0.986 -175.0 3.285 0.936 0.929 0.923 0.920 0.912 0.898 0.888 0.879 0.870 0.862 0.860 0.841 0.829 0.828 0.849 0.872 0.884 0.891 174.1 166.2 160.3 154.5 147.2 138.0 126.1 113.1 99.9 87.6 75.1 63.8 48.5 28.5 8.2 -8.9 -21.1 -31.7 2.855 2.194 1.835 1.643 1.532 1.466 1.402 1.339 1.271 1.212 1.176 1.194 1.217 1.171 1.060 -115.1 0.122 0.921 -132.2 0.117 0.794 -145.7 0.111 -109.9 0.623 0.734 -153.5 0.115 -118.2 0.679 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised May 2006 |
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